Characteristic of BJT in CB mode
Purpose: -
To study and plot the BJT characteristics in a common base configuration.
Apparatus: -
BJT, ammeters, regulated power supply, breadboard, voltmeter, connection wires.
Theory: -
In his configuration, the base is made common to both the input and out.
A BJT is a three-terminal two junction semiconductor device in which the conduction is due to both the charge carrier. Hence, it is a bipolar device. BJT is classified into two types NPN or PNP.
An NPN transistor consists of two N types in between which a layer of P is sand witched. The transistor consists of the three-terminal emitter, collector base. The emitter layer is the source of charge carrier and it is heavily doped with a moderate cross-sectional area. The collector collects the charge carrier and hence moderate doping and large cross-section area. The base region acts as a path for the movement of the charge carrier. In order to reduce the recombination of holes and electrons the base region is lightly doped and is of low cross-sectional area.
Current gain α: -
it is the ratio of the collector to base current at constant collector-base voltage. Its value ranges from 20-500
Procedure:-
Output characteristics: -
it is the curve between collector current I
1)Connects the circuit as per the circuit diagram.
2)Set I
3)Plot the graph V
4)calculate α
Transfer characteristics:-
1) set the V
2) vary I
3) note down I
Result:-
The transistor characteristics of CB configuration were plotted and obtained the value of α=___________
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